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FQD19N10LTM

FQD19N10LTM

For Reference Only

Part Number FQD19N10LTM
PNEDA Part # FQD19N10LTM
Description MOSFET N-CH 100V 15.6A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 44,508
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD19N10LTM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD19N10LTM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD19N10LTM, FQD19N10LTM Datasheet (Total Pages: 10, Size: 1,451.25 KB)
PDFFQD19N10LTM Datasheet Cover
FQD19N10LTM Datasheet Page 2 FQD19N10LTM Datasheet Page 3 FQD19N10LTM Datasheet Page 4 FQD19N10LTM Datasheet Page 5 FQD19N10LTM Datasheet Page 6 FQD19N10LTM Datasheet Page 7 FQD19N10LTM Datasheet Page 8 FQD19N10LTM Datasheet Page 9 FQD19N10LTM Datasheet Page 10

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FQD19N10LTM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C15.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs100mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds870pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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