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FQD3N60CTM-WS

FQD3N60CTM-WS

For Reference Only

Part Number FQD3N60CTM-WS
PNEDA Part # FQD3N60CTM-WS
Description MOSFET N-CH 600V 2.4A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,372
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD3N60CTM-WS Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD3N60CTM-WS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD3N60CTM-WS, FQD3N60CTM-WS Datasheet (Total Pages: 8, Size: 954.92 KB)
PDFFQD3N60CTM-WS Datasheet Cover
FQD3N60CTM-WS Datasheet Page 2 FQD3N60CTM-WS Datasheet Page 3 FQD3N60CTM-WS Datasheet Page 4 FQD3N60CTM-WS Datasheet Page 5 FQD3N60CTM-WS Datasheet Page 6 FQD3N60CTM-WS Datasheet Page 7 FQD3N60CTM-WS Datasheet Page 8

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FQD3N60CTM-WS Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.4Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds565pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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