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FQD3P50TM

FQD3P50TM FQD3P50TM

For Reference Only

Part Number FQD3P50TM
PNEDA Part # FQD3P50TM
Manufacturer ON Semiconductor
Description MOSFET P-CH 500V 2.1A DPAK
Unit Price
  • 1$ 0.0000
  • 100$ 0.0000
  • 500$ 0.0000
  • 1000$ 0.0000
  • 2500$ 0.0000
In Stock 39,174
Warehouses USA, Europe, China, Hong Kong SAR
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery
Estimated Delivery Jun 21 - Jun 26 (Choose Expedited Shipping)
Warranty Up to 1 year [PNEDA-Warranty]*

FQD3P50TM Resources

Brand ON Semiconductor
Mfr. Part NumberFQD3P50TM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD3P50TM, FQD3P50TM Datasheet (Total Pages: 8, Size: 400.38 KB)
PDFFQD3P50TM-AM002BLT Datasheet Cover
FQD3P50TM-AM002BLT Datasheet Page 2 FQD3P50TM-AM002BLT Datasheet Page 3 FQD3P50TM-AM002BLT Datasheet Page 4 FQD3P50TM-AM002BLT Datasheet Page 5 FQD3P50TM-AM002BLT Datasheet Page 6 FQD3P50TM-AM002BLT Datasheet Page 7 FQD3P50TM-AM002BLT Datasheet Page 8

FQD3P50TM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.9Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds660pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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