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IXTP8N65X2M

IXTP8N65X2M

For Reference Only

Part Number IXTP8N65X2M
PNEDA Part # IXTP8N65X2M
Description MOSFET N-CH 650V 4A X2 TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,682
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP8N65X2M Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP8N65X2M
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXTP8N65X2M Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds800pF @ 25V
FET Feature-
Power Dissipation (Max)32W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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