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NTH027N65S3F_F155

NTH027N65S3F_F155

For Reference Only

Part Number NTH027N65S3F_F155
PNEDA Part # NTH027N65S3F_F155
Description MOSFET N-CH 650V 27 MOHM TO247 P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,030
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTH027N65S3F_F155 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTH027N65S3F_F155
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTH027N65S3F_F155, NTH027N65S3F_F155 Datasheet (Total Pages: 10, Size: 508.26 KB)
PDFNTH027N65S3F_F155 Datasheet Cover
NTH027N65S3F_F155 Datasheet Page 2 NTH027N65S3F_F155 Datasheet Page 3 NTH027N65S3F_F155 Datasheet Page 4 NTH027N65S3F_F155 Datasheet Page 5 NTH027N65S3F_F155 Datasheet Page 6 NTH027N65S3F_F155 Datasheet Page 7 NTH027N65S3F_F155 Datasheet Page 8 NTH027N65S3F_F155 Datasheet Page 9 NTH027N65S3F_F155 Datasheet Page 10

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NTH027N65S3F_F155 Specifications

ManufacturerON Semiconductor
SeriesFRFET®, SuperFET® II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs27.4mOhm @ 35A, 10V
Vgs(th) (Max) @ Id5V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs259nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds7690pF @ 400V
FET Feature-
Power Dissipation (Max)595W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

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