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FQI32N20CTU

FQI32N20CTU

For Reference Only

Part Number FQI32N20CTU
PNEDA Part # FQI32N20CTU
Description MOSFET N-CH 200V 28A I2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,292
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQI32N20CTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQI32N20CTU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQI32N20CTU, FQI32N20CTU Datasheet (Total Pages: 9, Size: 1,201.87 KB)
PDFFQB32N20CTM Datasheet Cover
FQB32N20CTM Datasheet Page 2 FQB32N20CTM Datasheet Page 3 FQB32N20CTM Datasheet Page 4 FQB32N20CTM Datasheet Page 5 FQB32N20CTM Datasheet Page 6 FQB32N20CTM Datasheet Page 7 FQB32N20CTM Datasheet Page 8 FQB32N20CTM Datasheet Page 9

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FQI32N20CTU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs82mOhm @ 14A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2220pF @ 25V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 156W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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