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FQI7N80TU

FQI7N80TU

For Reference Only

Part Number FQI7N80TU
PNEDA Part # FQI7N80TU
Description MOSFET N-CH 800V 6.6A I2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,858
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 24 - Apr 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQI7N80TU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQI7N80TU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQI7N80TU, FQI7N80TU Datasheet (Total Pages: 10, Size: 1,100.13 KB)
PDFFQI7N80TU Datasheet Cover
FQI7N80TU Datasheet Page 2 FQI7N80TU Datasheet Page 3 FQI7N80TU Datasheet Page 4 FQI7N80TU Datasheet Page 5 FQI7N80TU Datasheet Page 6 FQI7N80TU Datasheet Page 7 FQI7N80TU Datasheet Page 8 FQI7N80TU Datasheet Page 9 FQI7N80TU Datasheet Page 10

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FQI7N80TU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs52nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1850pF @ 25V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 167W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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