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FQP19N10L

FQP19N10L

For Reference Only

Part Number FQP19N10L
PNEDA Part # FQP19N10L
Description MOSFET N-CH 100V 19A TO-220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,942
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQP19N10L Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQP19N10L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQP19N10L, FQP19N10L Datasheet (Total Pages: 8, Size: 626.91 KB)
PDFFQP19N10L Datasheet Cover
FQP19N10L Datasheet Page 2 FQP19N10L Datasheet Page 3 FQP19N10L Datasheet Page 4 FQP19N10L Datasheet Page 5 FQP19N10L Datasheet Page 6 FQP19N10L Datasheet Page 7 FQP19N10L Datasheet Page 8

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FQP19N10L Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs100mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds870pF @ 25V
FET Feature-
Power Dissipation (Max)75W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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