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FQPF18N20V2YDTU

FQPF18N20V2YDTU

For Reference Only

Part Number FQPF18N20V2YDTU
PNEDA Part # FQPF18N20V2YDTU
Description MOSFET N-CH 200V 18A TO-220F
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,804
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQPF18N20V2YDTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQPF18N20V2YDTU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQPF18N20V2YDTU, FQPF18N20V2YDTU Datasheet (Total Pages: 10, Size: 793.86 KB)
PDFFQPF18N20V2YDTU Datasheet Cover
FQPF18N20V2YDTU Datasheet Page 2 FQPF18N20V2YDTU Datasheet Page 3 FQPF18N20V2YDTU Datasheet Page 4 FQPF18N20V2YDTU Datasheet Page 5 FQPF18N20V2YDTU Datasheet Page 6 FQPF18N20V2YDTU Datasheet Page 7 FQPF18N20V2YDTU Datasheet Page 8 FQPF18N20V2YDTU Datasheet Page 9 FQPF18N20V2YDTU Datasheet Page 10

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FQPF18N20V2YDTU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs140mOhm @ 9A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1080pF @ 25V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F-3 (Y-Forming)
Package / CaseTO-220-3 Full Pack, Formed Leads

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