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FQPF7N65C_F105

FQPF7N65C_F105

For Reference Only

Part Number FQPF7N65C_F105
PNEDA Part # FQPF7N65C_F105
Description MOSFET N-CH 650V 7A TO-220F
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,150
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQPF7N65C_F105 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQPF7N65C_F105
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQPF7N65C_F105, FQPF7N65C_F105 Datasheet (Total Pages: 10, Size: 886.61 KB)
PDFFQPF7N65C_F105 Datasheet Cover
FQPF7N65C_F105 Datasheet Page 2 FQPF7N65C_F105 Datasheet Page 3 FQPF7N65C_F105 Datasheet Page 4 FQPF7N65C_F105 Datasheet Page 5 FQPF7N65C_F105 Datasheet Page 6 FQPF7N65C_F105 Datasheet Page 7 FQPF7N65C_F105 Datasheet Page 8 FQPF7N65C_F105 Datasheet Page 9 FQPF7N65C_F105 Datasheet Page 10

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FQPF7N65C_F105 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1245pF @ 25V
FET Feature-
Power Dissipation (Max)52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

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