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FQU10N20CTU

FQU10N20CTU

For Reference Only

Part Number FQU10N20CTU
PNEDA Part # FQU10N20CTU
Description MOSFET N-CH 200V 7.8A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,478
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQU10N20CTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQU10N20CTU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQU10N20CTU, FQU10N20CTU Datasheet (Total Pages: 11, Size: 654.9 KB)
PDFFQD10N20CTM_F080 Datasheet Cover
FQD10N20CTM_F080 Datasheet Page 2 FQD10N20CTM_F080 Datasheet Page 3 FQD10N20CTM_F080 Datasheet Page 4 FQD10N20CTM_F080 Datasheet Page 5 FQD10N20CTM_F080 Datasheet Page 6 FQD10N20CTM_F080 Datasheet Page 7 FQD10N20CTM_F080 Datasheet Page 8 FQD10N20CTM_F080 Datasheet Page 9 FQD10N20CTM_F080 Datasheet Page 10 FQD10N20CTM_F080 Datasheet Page 11

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FQU10N20CTU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C7.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds510pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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