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FZ800R12KS4B2NOSA1

FZ800R12KS4B2NOSA1

For Reference Only

Part Number FZ800R12KS4B2NOSA1
PNEDA Part # FZ800R12KS4B2NOSA1
Description MODULE IGBT A-IHM130-1
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,280
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 17 - Jul 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FZ800R12KS4B2NOSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberFZ800R12KS4B2NOSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules

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FZ800R12KS4B2NOSA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
ConfigurationSingle
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)1200A
Power - Max7600W
Vce(on) (Max) @ Vge, Ic3.7V @ 15V, 800A
Current - Collector Cutoff (Max)5mA
Input Capacitance (Cies) @ Vce52nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Cutoff (Max)

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Input Capacitance (Cies) @ Vce

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Cutoff (Max)

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Input Capacitance (Cies) @ Vce

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