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GA50JT06-258

GA50JT06-258

For Reference Only

Part Number GA50JT06-258
PNEDA Part # GA50JT06-258
Description TRANS SJT 600V 100A
Manufacturer GeneSiC Semiconductor
Unit Price Request a Quote
In Stock 6,300
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GA50JT06-258 Resources

Brand GeneSiC Semiconductor
ECAD Module ECAD
Mfr. Part NumberGA50JT06-258
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GA50JT06-258, GA50JT06-258 Datasheet (Total Pages: 11, Size: 2,651.93 KB)
PDFGA50JT06-258 Datasheet Cover
GA50JT06-258 Datasheet Page 2 GA50JT06-258 Datasheet Page 3 GA50JT06-258 Datasheet Page 4 GA50JT06-258 Datasheet Page 5 GA50JT06-258 Datasheet Page 6 GA50JT06-258 Datasheet Page 7 GA50JT06-258 Datasheet Page 8 GA50JT06-258 Datasheet Page 9 GA50JT06-258 Datasheet Page 10 GA50JT06-258 Datasheet Page 11

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GA50JT06-258 Specifications

ManufacturerGeneSiC Semiconductor
Series-
FET Type-
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs25mOhm @ 50A
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)769W (Tc)
Operating Temperature-55°C ~ 225°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-258
Package / CaseTO-258-3, TO-258AA

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