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GP1M003A090PH

GP1M003A090PH

For Reference Only

Part Number GP1M003A090PH
PNEDA Part # GP1M003A090PH
Description MOSFET N-CH 900V 2.5A IPAK
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 8,154
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GP1M003A090PH Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGP1M003A090PH
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GP1M003A090PH, GP1M003A090PH Datasheet (Total Pages: 6, Size: 959.36 KB)
PDFGP1M003A090PH Datasheet Cover
GP1M003A090PH Datasheet Page 2 GP1M003A090PH Datasheet Page 3 GP1M003A090PH Datasheet Page 4 GP1M003A090PH Datasheet Page 5 GP1M003A090PH Datasheet Page 6

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GP1M003A090PH Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.1Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds748pF @ 25V
FET Feature-
Power Dissipation (Max)94W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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