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GP1M008A050PG

GP1M008A050PG

For Reference Only

Part Number GP1M008A050PG
PNEDA Part # GP1M008A050PG
Description MOSFET N-CH 500V 8A IPAK
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 3,888
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GP1M008A050PG Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGP1M008A050PG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GP1M008A050PG, GP1M008A050PG Datasheet (Total Pages: 6, Size: 520.09 KB)
PDFGP1M008A050CG Datasheet Cover
GP1M008A050CG Datasheet Page 2 GP1M008A050CG Datasheet Page 3 GP1M008A050CG Datasheet Page 4 GP1M008A050CG Datasheet Page 5 GP1M008A050CG Datasheet Page 6

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GP1M008A050PG Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs850mOhm @ 4A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds937pF @ 25V
FET Feature-
Power Dissipation (Max)120W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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