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GP1M009A050FSH

GP1M009A050FSH

For Reference Only

Part Number GP1M009A050FSH
PNEDA Part # GP1M009A050FSH
Description MOSFET N-CH 500V 8.5A TO220F
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 6,480
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GP1M009A050FSH Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGP1M009A050FSH
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GP1M009A050FSH, GP1M009A050FSH Datasheet (Total Pages: 7, Size: 408.13 KB)
PDFGP1M009A050HS Datasheet Cover
GP1M009A050HS Datasheet Page 2 GP1M009A050HS Datasheet Page 3 GP1M009A050HS Datasheet Page 4 GP1M009A050HS Datasheet Page 5 GP1M009A050HS Datasheet Page 6 GP1M009A050HS Datasheet Page 7

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GP1M009A050FSH Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs850mOhm @ 4.25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1195pF @ 25V
FET Feature-
Power Dissipation (Max)39W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

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