RQJ0305EQDQS#H1
For Reference Only
| Part Number | RQJ0305EQDQS#H1 |
| PNEDA Part # | RQJ0305EQDQS-H1 |
| Description | MOSFET P-CH UPAK |
| Manufacturer | Renesas Electronics America |
| Unit Price | Request a Quote |
| In Stock | 5,472 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 20 - May 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
RQJ0305EQDQS#H1 Resources
| Brand | Renesas Electronics America |
| ECAD Module |
|
| Mfr. Part Number | RQJ0305EQDQS#H1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- RQJ0305EQDQS#H1 Datasheet
- where to find RQJ0305EQDQS#H1
- Renesas Electronics America
- Renesas Electronics America RQJ0305EQDQS#H1
- RQJ0305EQDQS#H1 PDF Datasheet
- RQJ0305EQDQS#H1 Stock
- RQJ0305EQDQS#H1 Pinout
- Datasheet RQJ0305EQDQS#H1
- RQJ0305EQDQS#H1 Supplier
- Renesas Electronics America Distributor
- RQJ0305EQDQS#H1 Price
- RQJ0305EQDQS#H1 Distributor
RQJ0305EQDQS#H1 Specifications
| Manufacturer | Renesas Electronics America |
| Series | - |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.7A, 4.5V |
| Vgs(th) (Max) @ Id | 1.4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 4.5V |
| Vgs (Max) | +8V, -12V |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | UPAK |
| Package / Case | TO-243AA |
The Products You May Be Interested In
|
Manufacturer Microsemi Corporation Series POWER MOS 8™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 42A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 130mOhm @ 21A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6810pF @ 25V FET Feature - Power Dissipation (Max) 625W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D3Pak Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 25A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.5mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta), 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-5 Package / Case 8-PowerTDFN |
Manufacturer Toshiba Semiconductor and Storage Series U-MOSVIII-H FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 28A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.9mOhm @ 14A, 10V Vgs(th) (Max) @ Id 4V @ 300µA Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 30V FET Feature - Power Dissipation (Max) 1.6W (Ta), 57W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Advance (5x5) Package / Case 8-PowerVDFN |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 24.5mOhm @ 18A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 740pF @ 25V FET Feature - Power Dissipation (Max) 48W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package IPAK (TO-251) Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer IXYS Series Linear L2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 24mOhm @ 40A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 103nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V FET Feature - Power Dissipation (Max) 357W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
