Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRLR7811WCPBF

IRLR7811WCPBF

For Reference Only

Part Number IRLR7811WCPBF
PNEDA Part # IRLR7811WCPBF
Description MOSFET N-CH 30V 64A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,878
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLR7811WCPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRLR7811WCPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRLR7811WCPBF, IRLR7811WCPBF Datasheet (Total Pages: 10, Size: 207.28 KB)
PDFIRLR7811WCTRLP Datasheet Cover
IRLR7811WCTRLP Datasheet Page 2 IRLR7811WCTRLP Datasheet Page 3 IRLR7811WCTRLP Datasheet Page 4 IRLR7811WCTRLP Datasheet Page 5 IRLR7811WCTRLP Datasheet Page 6 IRLR7811WCTRLP Datasheet Page 7 IRLR7811WCTRLP Datasheet Page 8 IRLR7811WCTRLP Datasheet Page 9 IRLR7811WCTRLP Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRLR7811WCPBF Datasheet
  • where to find IRLR7811WCPBF
  • Infineon Technologies

  • Infineon Technologies IRLR7811WCPBF
  • IRLR7811WCPBF PDF Datasheet
  • IRLR7811WCPBF Stock

  • IRLR7811WCPBF Pinout
  • Datasheet IRLR7811WCPBF
  • IRLR7811WCPBF Supplier

  • Infineon Technologies Distributor
  • IRLR7811WCPBF Price
  • IRLR7811WCPBF Distributor

IRLR7811WCPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs31nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds2260pF @ 15V
FET Feature-
Power Dissipation (Max)71W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

R6020ENJTL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

196mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 25V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LPTS (D2PAK)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

DMP1245UFCL-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

6.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

29mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26.1nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1357.4pF @ 10V

FET Feature

-

Power Dissipation (Max)

613mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

X1-DFN1616-6 (Type E)

Package / Case

6-PowerUFDFN

SUM52N20-39P-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

52A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V, 15V

Rds On (Max) @ Id, Vgs

38mOhm @ 20A, 15V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

185nC @ 15V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

4220pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.12W (Ta), 250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D2Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

RFP45N06

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

28mOhm @ 45A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2050pF @ 25V

FET Feature

-

Power Dissipation (Max)

131W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

SIJ462DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

46.5A(Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 30V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

Recently Sold

ATXMEGA32A4U-AU

ATXMEGA32A4U-AU

Microchip Technology

IC MCU 8/16BIT 32KB FLASH 44TQFP

IXFK90N20

IXFK90N20

IXYS

MOSFET N-CH 200V 90A TO-264AA

4608X-102-682LF

4608X-102-682LF

Bourns

RES ARRAY 4 RES 6.8K OHM 8SIP

IR2110STRPBF

IR2110STRPBF

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 16SOIC

TMMDB3

TMMDB3

STMicroelectronics

DIAC 28-36V 2A MINIMELF

PIC16F684-I/ST

PIC16F684-I/ST

Microchip Technology

IC MCU 8BIT 3.5KB FLASH 14TSSOP

LTC1773EMS#TRPBF

LTC1773EMS#TRPBF

Linear Technology/Analog Devices

IC REG CTRLR BUCK 10MSOP

KSZ8081RNBCA-TR

KSZ8081RNBCA-TR

Microchip Technology

IC TRANSCEIVER FULL 1/1 32QFN

AD620ARZ

AD620ARZ

Analog Devices

IC INST AMP 1 CIRCUIT 8SOIC

M29W800DT70N6E

M29W800DT70N6E

Micron Technology Inc.

IC FLASH 8M PARALLEL 48TSOP

25AA512T-I/SM

25AA512T-I/SM

Microchip Technology

IC EEPROM 512K SPI 20MHZ 8SOIJ

2016L100/33DR

2016L100/33DR

Littelfuse

PTC RESET FUSE 33V 1.1A 2016