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GP1M009A090FH

GP1M009A090FH

For Reference Only

Part Number GP1M009A090FH
PNEDA Part # GP1M009A090FH
Description MOSFET N-CH 900V 9A TO220F
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 6,030
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GP1M009A090FH Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGP1M009A090FH
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GP1M009A090FH, GP1M009A090FH Datasheet (Total Pages: 7, Size: 390.8 KB)
PDFGP1M009A090FH Datasheet Cover
GP1M009A090FH Datasheet Page 2 GP1M009A090FH Datasheet Page 3 GP1M009A090FH Datasheet Page 4 GP1M009A090FH Datasheet Page 5 GP1M009A090FH Datasheet Page 6 GP1M009A090FH Datasheet Page 7

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GP1M009A090FH Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs65nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2324pF @ 25V
FET Feature-
Power Dissipation (Max)48W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

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