GT10G131(TE12L,Q)
For Reference Only
| Part Number | GT10G131(TE12L,Q) |
| PNEDA Part # | GT10G131-TE12L-Q |
| Description | IGBT 400V 1W 8-SOIC |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 6,030 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 8 - May 13 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
GT10G131(TE12L Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | GT10G131(TE12L,Q) |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- GT10G131(TE12L,Q) Datasheet
- where to find GT10G131(TE12L,Q)
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage GT10G131(TE12L,Q)
- GT10G131(TE12L,Q) PDF Datasheet
- GT10G131(TE12L,Q) Stock
- GT10G131(TE12L,Q) Pinout
- Datasheet GT10G131(TE12L,Q)
- GT10G131(TE12L,Q) Supplier
- Toshiba Semiconductor and Storage Distributor
- GT10G131(TE12L,Q) Price
- GT10G131(TE12L,Q) Distributor
GT10G131(TE12L Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
| Current - Collector (Ic) (Max) | - |
| Current - Collector Pulsed (Icm) | 200A |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 4V, 200A |
| Power - Max | 1W |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | - |
| Td (on/off) @ 25°C | 3.1µs/2µs |
| Test Condition | - |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
| Supplier Device Package | 8-SOP (5.5x6.0) |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 70A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 39A Power - Max 200W Switching Energy - Input Type Standard Gate Charge - Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AC |
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 7A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic - Power - Max - Switching Energy 62µJ (on), 140µJ (off) Input Type Standard Gate Charge - Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature - Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220FP |
Manufacturer STMicroelectronics Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 160A Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 40A Power - Max 468W Switching Energy 1mJ (on), 1.32mJ (off) Input Type Standard Gate Charge 158nC Td (on/off) @ 25°C 18ns/152ns Test Condition 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr) 488ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 20.3A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A Power - Max 45W Switching Energy 630µJ (on), 1.39mJ (off) Input Type Standard Gate Charge 51nC Td (on/off) @ 25°C 42ns/230ns Test Condition 480V, 17A, 23Ohm, 15V Reverse Recovery Time (trr) 42ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220AB Full-Pak |
Manufacturer ON Semiconductor Series - IGBT Type Field Stop Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 160A Current - Collector Pulsed (Icm) 160A Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A Power - Max 536W Switching Energy 1.7mJ (on), 1.1mJ (off) Input Type Standard Gate Charge 313nC Td (on/off) @ 25°C 30ns/145ns Test Condition 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr) 240ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-4 Supplier Device Package TO-247-4L |
