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IXBP5N160G

IXBP5N160G

For Reference Only

Part Number IXBP5N160G
PNEDA Part # IXBP5N160G
Description IGBT 1600V 5.7A 68W TO220AB
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,574
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXBP5N160G Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXBP5N160G
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXBP5N160G, IXBP5N160G Datasheet (Total Pages: 2, Size: 39.95 KB)
PDFIXBH5N160G Datasheet Cover
IXBH5N160G Datasheet Page 2

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IXBP5N160G Specifications

ManufacturerIXYS
SeriesBIMOSFET™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1600V
Current - Collector (Ic) (Max)5.7A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic7.2V @ 15V, 3A
Power - Max68W
Switching Energy-
Input TypeStandard
Gate Charge26nC
Td (on/off) @ 25°C-
Test Condition960V, 3A, 47Ohm, 10V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Td (on/off) @ 25°C

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Test Condition

480V, 9A, 50Ohm, 15V

Reverse Recovery Time (trr)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

27ns/75ns

Test Condition

400V, 6A, 47Ohm, 15V

Reverse Recovery Time (trr)

74ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

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Supplier Device Package

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

150nC

Td (on/off) @ 25°C

60ns/160ns

Test Condition

400V, 48A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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