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HGT1S3N60A4DS9A

HGT1S3N60A4DS9A

For Reference Only

Part Number HGT1S3N60A4DS9A
PNEDA Part # HGT1S3N60A4DS9A
Description IGBT 600V 17A 70W D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,930
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 9 - Jul 14 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGT1S3N60A4DS9A Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGT1S3N60A4DS9A
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
HGT1S3N60A4DS9A, HGT1S3N60A4DS9A Datasheet (Total Pages: 9, Size: 113.52 KB)
PDFHGT1S3N60A4DS9A Datasheet Cover
HGT1S3N60A4DS9A Datasheet Page 2 HGT1S3N60A4DS9A Datasheet Page 3 HGT1S3N60A4DS9A Datasheet Page 4 HGT1S3N60A4DS9A Datasheet Page 5 HGT1S3N60A4DS9A Datasheet Page 6 HGT1S3N60A4DS9A Datasheet Page 7 HGT1S3N60A4DS9A Datasheet Page 8 HGT1S3N60A4DS9A Datasheet Page 9

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HGT1S3N60A4DS9A Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)17A
Current - Collector Pulsed (Icm)40A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 3A
Power - Max70W
Switching Energy37µJ (on), 25µJ (off)
Input TypeStandard
Gate Charge21nC
Td (on/off) @ 25°C6ns/73ns
Test Condition390V, 3A, 50Ohm, 15V
Reverse Recovery Time (trr)29ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Package / Case

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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450nC

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39ns/295ns

Test Condition

480V, 100A, 1.5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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Supplier Device Package

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FGY100T65SCDT

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Microsemi

Manufacturer

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

463W

Switching Energy

260µJ (on), 250µJ (off)

Input Type

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90nC

Td (on/off) @ 25°C

13ns/55ns

Test Condition

400V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

T-MAX™

GPA030A120MN-FD

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 30A

Power - Max

329W

Switching Energy

4.5mJ (on), 850µJ (off)

Input Type

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Gate Charge

330nC

Td (on/off) @ 25°C

40ns/245ns

Test Condition

600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

450ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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