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HGTD1N120BNS9A

HGTD1N120BNS9A

For Reference Only

Part Number HGTD1N120BNS9A
PNEDA Part # HGTD1N120BNS9A
Description IGBT 1200V 5.3A 60W TO252AA
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 47,598
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGTD1N120BNS9A Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGTD1N120BNS9A
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
HGTD1N120BNS9A, HGTD1N120BNS9A Datasheet (Total Pages: 10, Size: 217.31 KB)
PDFHGTD1N120BNS9A Datasheet Cover
HGTD1N120BNS9A Datasheet Page 2 HGTD1N120BNS9A Datasheet Page 3 HGTD1N120BNS9A Datasheet Page 4 HGTD1N120BNS9A Datasheet Page 5 HGTD1N120BNS9A Datasheet Page 6 HGTD1N120BNS9A Datasheet Page 7 HGTD1N120BNS9A Datasheet Page 8 HGTD1N120BNS9A Datasheet Page 9 HGTD1N120BNS9A Datasheet Page 10

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HGTD1N120BNS9A Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)5.3A
Current - Collector Pulsed (Icm)6A
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 1A
Power - Max60W
Switching Energy70µJ (on), 90µJ (off)
Input TypeStandard
Gate Charge14nC
Td (on/off) @ 25°C15ns/67ns
Test Condition960V, 1A, 82Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA

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