HGTD1N120BNS9A
For Reference Only
| Part Number | HGTD1N120BNS9A |
| PNEDA Part # | HGTD1N120BNS9A |
| Description | IGBT 1200V 5.3A 60W TO252AA |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 47,598 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 16 - Jun 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
HGTD1N120BNS9A Resources
| Brand | ON Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | HGTD1N120BNS9A |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- HGTD1N120BNS9A Datasheet
- where to find HGTD1N120BNS9A
- ON Semiconductor
- ON Semiconductor HGTD1N120BNS9A
- HGTD1N120BNS9A PDF Datasheet
- HGTD1N120BNS9A Stock
- HGTD1N120BNS9A Pinout
- Datasheet HGTD1N120BNS9A
- HGTD1N120BNS9A Supplier
- ON Semiconductor Distributor
- HGTD1N120BNS9A Price
- HGTD1N120BNS9A Distributor
HGTD1N120BNS9A Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 5.3A |
| Current - Collector Pulsed (Icm) | 6A |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 1A |
| Power - Max | 60W |
| Switching Energy | 70µJ (on), 90µJ (off) |
| Input Type | Standard |
| Gate Charge | 14nC |
| Td (on/off) @ 25°C | 15ns/67ns |
| Test Condition | 960V, 1A, 82Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252AA |
The Products You May Be Interested In
|
Manufacturer Microsemi Corporation Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 93A Current - Collector Pulsed (Icm) 195A Vce(on) (Max) @ Vge, Ic 3.15V @ 15V, 50A Power - Max 415W Switching Energy 755µJ (off) Input Type Standard Gate Charge 235nC Td (on/off) @ 25°C 16ns/225ns Test Condition 400V, 50A, 4.7Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 |
Manufacturer IXYS Series - IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 1000V Current - Collector (Ic) (Max) 40A Current - Collector Pulsed (Icm) 80A Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A Power - Max 150W Switching Energy 3.5mJ (off) Input Type Standard Gate Charge 73nC Td (on/off) @ 25°C 30ns/350ns Test Condition 800V, 20A, 47Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package TO-268 |
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 140A Current - Collector Pulsed (Icm) 300A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A Power - Max 455W Switching Energy 2.5mJ (on), 2.2mJ (off) Input Type Standard Gate Charge 210nC Td (on/off) @ 25°C 50ns/200ns Test Condition 400V, 75A, 10Ohm, 15V Reverse Recovery Time (trr) 170ns Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AD |
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 13A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 3V @ 15V, 6.5A Power - Max 60W Switching Energy - Input Type Standard Gate Charge - Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer IXYS Series BIMOSFET™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 3000V Current - Collector (Ic) (Max) 60A Current - Collector Pulsed (Icm) 380A Vce(on) (Max) @ Vge, Ic 3V @ 15V, 42A Power - Max 240W Switching Energy - Input Type Standard Gate Charge 200nC Td (on/off) @ 25°C 72ns/445ns Test Condition 1500V, 42A, 20Ohm, 15V Reverse Recovery Time (trr) 1.7µs Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case i4-Pac™-4, Isolated Supplier Device Package ISOPLUS i4-PAC™ |
