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APT50GS60BRDLG

APT50GS60BRDLG

For Reference Only

Part Number APT50GS60BRDLG
PNEDA Part # APT50GS60BRDLG
Description IGBT 600V 93A 415W TO247
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 8,352
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT50GS60BRDLG Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT50GS60BRDLG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT50GS60BRDLG Specifications

ManufacturerMicrosemi Corporation
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)93A
Current - Collector Pulsed (Icm)195A
Vce(on) (Max) @ Vge, Ic3.15V @ 15V, 50A
Power - Max415W
Switching Energy755µJ (off)
Input TypeStandard
Gate Charge235nC
Td (on/off) @ 25°C16ns/225ns
Test Condition400V, 50A, 4.7Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

110A

Vce(on) (Max) @ Vge, Ic

5V @ 15V, 21A

Power - Max

350W

Switching Energy

4.1mJ (on), 1.25mJ (off)

Input Type

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Gate Charge

157nC

Td (on/off) @ 25°C

27ns/270ns

Test Condition

850V, 32A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

150ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

55A

Current - Collector Pulsed (Icm)

220A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 27A

Power - Max

200W

Switching Energy

80µJ (on), 320µJ (off)

Input Type

Standard

Gate Charge

180nC

Td (on/off) @ 25°C

46ns/120ns

Test Condition

480V, 27A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

IKP08N65H5XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop®

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

18A

Current - Collector Pulsed (Icm)

24A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 8A

Power - Max

70W

Switching Energy

70µJ (on), 30µJ (off)

Input Type

Standard

Gate Charge

22nC

Td (on/off) @ 25°C

11ns/115ns

Test Condition

400V, 4A, 48Ohm, 15V

Reverse Recovery Time (trr)

40ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

Manufacturer

IXYS

Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

220A

Current - Collector Pulsed (Icm)

700A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 100A

Power - Max

400W

Switching Energy

10mJ (on), 33mJ (off)

Input Type

Standard

Gate Charge

420nC

Td (on/off) @ 25°C

40ns/490ns

Test Condition

960V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

700ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

24-PowerSMD, 21 Leads

Supplier Device Package

24-SMPD

IRG4PSH71UPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

99A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 70A

Power - Max

350W

Switching Energy

4.77mJ (on), 9.54mJ (off)

Input Type

Standard

Gate Charge

370nC

Td (on/off) @ 25°C

51ns/280ns

Test Condition

960V, 70A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-274AA

Supplier Device Package

SUPER-247™ (TO-274AA)

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