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IKP08N65H5XKSA1

IKP08N65H5XKSA1

For Reference Only

Part Number IKP08N65H5XKSA1
PNEDA Part # IKP08N65H5XKSA1
Description IGBT 650V 18A 70W PG-TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,004
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 23 - May 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IKP08N65H5XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIKP08N65H5XKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IKP08N65H5XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesTrenchStop®
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)18A
Current - Collector Pulsed (Icm)24A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 8A
Power - Max70W
Switching Energy70µJ (on), 30µJ (off)
Input TypeStandard
Gate Charge22nC
Td (on/off) @ 25°C11ns/115ns
Test Condition400V, 4A, 48Ohm, 15V
Reverse Recovery Time (trr)40ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

140µJ (on), 120µJ (off)

Input Type

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Td (on/off) @ 25°C

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Test Condition

480V, 5A, 100Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

740µJ (on), 3mJ (off)

Input Type

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Gate Charge

80nC

Td (on/off) @ 25°C

18ns/330ns

Test Condition

400V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

3mJ (on), 1mJ (off)

Input Type

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Gate Charge

142nC

Td (on/off) @ 25°C

28ns/133ns

Test Condition

600V, 50A, 5Ohm, 15V

Reverse Recovery Time (trr)

195ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Mounting Type

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

24A

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 8A

Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Operating Temperature

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Package / Case

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