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HGTG10N120BND

HGTG10N120BND

For Reference Only

Part Number HGTG10N120BND
PNEDA Part # HGTG10N120BND
Description IGBT 1200V 35A 298W TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 15,480
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGTG10N120BND Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGTG10N120BND
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
HGTG10N120BND, HGTG10N120BND Datasheet (Total Pages: 10, Size: 230.65 KB)
PDFHGTG10N120BND Datasheet Cover
HGTG10N120BND Datasheet Page 2 HGTG10N120BND Datasheet Page 3 HGTG10N120BND Datasheet Page 4 HGTG10N120BND Datasheet Page 5 HGTG10N120BND Datasheet Page 6 HGTG10N120BND Datasheet Page 7 HGTG10N120BND Datasheet Page 8 HGTG10N120BND Datasheet Page 9 HGTG10N120BND Datasheet Page 10

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HGTG10N120BND Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)35A
Current - Collector Pulsed (Icm)80A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A
Power - Max298W
Switching Energy850µJ (on), 800µJ (off)
Input TypeStandard
Gate Charge100nC
Td (on/off) @ 25°C23ns/165ns
Test Condition960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)70ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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