HIP6603BECBZ-T
For Reference Only
| Part Number | HIP6603BECBZ-T |
| PNEDA Part # | HIP6603BECBZ-T |
| Description | IC DRIVER MOSF SYNC BUCK 8EPSOIC |
| Manufacturer | Renesas Electronics America Inc. |
| Unit Price | Request a Quote |
| In Stock | 7,830 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 12 - May 17 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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HIP6603BECBZ-T Resources
| Brand | Renesas Electronics America Inc. |
| ECAD Module |
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| Mfr. Part Number | HIP6603BECBZ-T |
| Category | Semiconductors › Power Management ICs › PMIC - Gate Drivers |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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HIP6603BECBZ-T Specifications
| Manufacturer | Renesas Electronics America Inc. |
| Series | - |
| Driven Configuration | Half-Bridge |
| Channel Type | Synchronous |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Voltage - Supply | 10.8V ~ 13.2V |
| Logic Voltage - VIL, VIH | - |
| Current - Peak Output (Source, Sink) | - |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 15V |
| Rise / Fall Time (Typ) | 20ns, 20ns |
| Operating Temperature | 0°C ~ 125°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
| Supplier Device Package | 8-SOIC-EP |
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Manufacturer Richtek USA Inc. Series - Driven Configuration High-Side or Low-Side Channel Type Independent Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 10V ~ 20V Logic Voltage - VIL, VIH 0.8V, 2.5V Current - Peak Output (Source, Sink) 300mA, 600mA Input Type Non-Inverting High Side Voltage - Max (Bootstrap) 600V Rise / Fall Time (Typ) 70ns, 35ns Operating Temperature -40°C ~ 125°C (TA) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOP |
Manufacturer STMicroelectronics Series - Driven Configuration Half-Bridge Channel Type Independent Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 12.5V ~ 20V Logic Voltage - VIL, VIH 1.1V, 1.9V Current - Peak Output (Source, Sink) 290mA, 430mA Input Type Non-Inverting High Side Voltage - Max (Bootstrap) 600V Rise / Fall Time (Typ) 75ns, 35ns Operating Temperature -40°C ~ 125°C (TJ) Mounting Type Surface Mount Package / Case 14-SOIC (0.154", 3.90mm Width) Supplier Device Package 14-SO |
