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HUF75631SK8T

HUF75631SK8T

For Reference Only

Part Number HUF75631SK8T
PNEDA Part # HUF75631SK8T
Description MOSFET N-CH 100V 5.5A 8-SOP
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,398
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 28 - Jul 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HUF75631SK8T Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHUF75631SK8T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
HUF75631SK8T, HUF75631SK8T Datasheet (Total Pages: 11, Size: 251.06 KB)
PDFHUF75631SK8T Datasheet Cover
HUF75631SK8T Datasheet Page 2 HUF75631SK8T Datasheet Page 3 HUF75631SK8T Datasheet Page 4 HUF75631SK8T Datasheet Page 5 HUF75631SK8T Datasheet Page 6 HUF75631SK8T Datasheet Page 7 HUF75631SK8T Datasheet Page 8 HUF75631SK8T Datasheet Page 9 HUF75631SK8T Datasheet Page 10 HUF75631SK8T Datasheet Page 11

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HUF75631SK8T Specifications

ManufacturerON Semiconductor
SeriesUltraFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs39mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs79nC @ 20V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1225pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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