Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

HUFA75329D3S

HUFA75329D3S

For Reference Only

Part Number HUFA75329D3S
PNEDA Part # HUFA75329D3S
Description MOSFET N-CH 55V 20A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,772
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HUFA75329D3S Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHUFA75329D3S
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
HUFA75329D3S, HUFA75329D3S Datasheet (Total Pages: 10, Size: 311.86 KB)
PDFHUFA75329D3ST Datasheet Cover
HUFA75329D3ST Datasheet Page 2 HUFA75329D3ST Datasheet Page 3 HUFA75329D3ST Datasheet Page 4 HUFA75329D3ST Datasheet Page 5 HUFA75329D3ST Datasheet Page 6 HUFA75329D3ST Datasheet Page 7 HUFA75329D3ST Datasheet Page 8 HUFA75329D3ST Datasheet Page 9 HUFA75329D3ST Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • HUFA75329D3S Datasheet
  • where to find HUFA75329D3S
  • ON Semiconductor

  • ON Semiconductor HUFA75329D3S
  • HUFA75329D3S PDF Datasheet
  • HUFA75329D3S Stock

  • HUFA75329D3S Pinout
  • Datasheet HUFA75329D3S
  • HUFA75329D3S Supplier

  • ON Semiconductor Distributor
  • HUFA75329D3S Price
  • HUFA75329D3S Distributor

HUFA75329D3S Specifications

ManufacturerON Semiconductor
SeriesUltraFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs26mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs65nC @ 20V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1060pF @ 25V
FET Feature-
Power Dissipation (Max)128W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

AUIRLR2908

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

28mOhm @ 23A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1890pF @ 25V

FET Feature

-

Power Dissipation (Max)

120W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-PAK (TO-252AA)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

DMN65D8L-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

310mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

3Ohm @ 115mA, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.87nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

22pF @ 25V

FET Feature

-

Power Dissipation (Max)

370mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

NDT451N

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

50mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

730pF @ 10V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

SOT-223-4

Package / Case

TO-261-4, TO-261AA

IPW65R150CFDAFKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

22.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id

4.5V @ 900µA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2340pF @ 100V

FET Feature

-

Power Dissipation (Max)

195.3W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3

Package / Case

TO-247-3

SUM110P08-11L-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

270nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10850pF @ 40V

FET Feature

-

Power Dissipation (Max)

13.6W (Ta), 375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D2Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

LT3012EFE#PBF

LT3012EFE#PBF

Linear Technology/Analog Devices

IC REG LIN POS ADJ 250MA 16TSSOP

CMS15(TE12L,Q,M)

CMS15(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 3A M-FLAT

74HC4051D

74HC4051D

Toshiba Semiconductor and Storage

IC MUX 8:1 4 OHM 16SOIC

MAX491ESD+T

MAX491ESD+T

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC

KSZ8081RNBCA-TR

KSZ8081RNBCA-TR

Microchip Technology

IC TRANSCEIVER FULL 1/1 32QFN

VRF150MP

VRF150MP

Microsemi

RF MOSFET N-CHANNEL 50V M174

FDV303N

FDV303N

ON Semiconductor

MOSFET N-CH 25V 680MA SOT-23

XC7Z045-2FFG676I

XC7Z045-2FFG676I

Xilinx

IC SOC CORTEX-A9 800MHZ 676FCBGA

MCR03EZPJ000

MCR03EZPJ000

Rohm Semiconductor

RES SMD 0 OHM JUMPER 1/10W 0603

LSXH4L

LSXH4L

Honeywell Sensing and Productivity Solutions

SWITCH SNAP ACTION DPDT 10A 120V

MAX1490BEPG+

MAX1490BEPG+

Maxim Integrated

IC TRANSCEIVER FULL 1/1 24DIP

IRG4BC20KDSTRRP

IRG4BC20KDSTRRP

Infineon Technologies

IGBT 600V 16A 60W D2PAK