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HUFA76429D3ST-F085

HUFA76429D3ST-F085

For Reference Only

Part Number HUFA76429D3ST-F085
PNEDA Part # HUFA76429D3ST-F085
Description MOSFET N-CH 60V 20A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,600
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HUFA76429D3ST-F085 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHUFA76429D3ST-F085
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
HUFA76429D3ST-F085, HUFA76429D3ST-F085 Datasheet (Total Pages: 10, Size: 372.85 KB)
PDFHUFA76429D3ST-F085 Datasheet Cover
HUFA76429D3ST-F085 Datasheet Page 2 HUFA76429D3ST-F085 Datasheet Page 3 HUFA76429D3ST-F085 Datasheet Page 4 HUFA76429D3ST-F085 Datasheet Page 5 HUFA76429D3ST-F085 Datasheet Page 6 HUFA76429D3ST-F085 Datasheet Page 7 HUFA76429D3ST-F085 Datasheet Page 8 HUFA76429D3ST-F085 Datasheet Page 9 HUFA76429D3ST-F085 Datasheet Page 10

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HUFA76429D3ST-F085 Specifications

ManufacturerON Semiconductor
SeriesUltraFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs23mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs46nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds1480pF @ 25V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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