IHW15N120E1XKSA1
For Reference Only
| Part Number | IHW15N120E1XKSA1 |
| PNEDA Part # | IHW15N120E1XKSA1 |
| Description | IGBT NPT/TRENCH 1200V 30A TO247 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,244 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 2 - May 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IHW15N120E1XKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IHW15N120E1XKSA1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IHW15N120E1XKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | TrenchStop™ |
| IGBT Type | NPT and Trench |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 30A |
| Current - Collector Pulsed (Icm) | 45A |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 15A |
| Power - Max | 156W |
| Switching Energy | 300µJ (off) |
| Input Type | Standard |
| Gate Charge | 90nC |
| Td (on/off) @ 25°C | - |
| Test Condition | - |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3 |
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Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 45A Current - Collector Pulsed (Icm) 108A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 12A Power - Max 167W Switching Energy 55µJ (on), 100µJ (off) Input Type Standard Gate Charge 23nC Td (on/off) @ 25°C 6ns/40ns Test Condition 390V, 12A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer GeneSiC Semiconductor Series - IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) - Current - Collector Pulsed (Icm) 35A Vce(on) (Max) @ Vge, Ic 3V @ 15V, 35A Power - Max - Switching Energy 2.66mJ (on), 4.35mJ (off) Input Type Standard Gate Charge 50nC Td (on/off) @ 25°C - Test Condition 800V, 35A, 22Ohm, 15V Reverse Recovery Time (trr) 36ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AB |
Manufacturer IXYS Series GenX3™, XPT™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 188A Current - Collector Pulsed (Icm) 490A Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 100A Power - Max 1150W Switching Energy 6.5mJ (on), 2.9mJ (off) Input Type Standard Gate Charge 270nC Td (on/off) @ 25°C 32ns/123ns Test Condition 600V, 100A, 1Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-264-3, TO-264AA Supplier Device Package TO-264 (IXYK) |
