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IHW25N120R2FKSA1

IHW25N120R2FKSA1

For Reference Only

Part Number IHW25N120R2FKSA1
PNEDA Part # IHW25N120R2FKSA1
Description IGBT 1200V 50A 365W TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,536
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IHW25N120R2FKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIHW25N120R2FKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IHW25N120R2FKSA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)50A
Current - Collector Pulsed (Icm)75A
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 25A
Power - Max365W
Switching Energy1.59mJ
Input TypeStandard
Gate Charge60.7nC
Td (on/off) @ 25°C-/324ns
Test Condition600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

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Current - Collector (Ic) (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Supplier Device Package

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Operating Temperature

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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