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IHW30N160R5XKSA1

IHW30N160R5XKSA1

For Reference Only

Part Number IHW30N160R5XKSA1
PNEDA Part # IHW30N160R5XKSA1
Description HOME APPLIANCES 14
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,308
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IHW30N160R5XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIHW30N160R5XKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IHW30N160R5XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesTrenchStop™
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1600V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)90A
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 30A
Power - Max263W
Switching Energy2mJ (off)
Input TypeStandard
Gate Charge205nC
Td (on/off) @ 25°C-/290ns
Test Condition600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

30A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 10A

Power - Max

150W

Switching Energy

190µJ (on), 160µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

12ns/168ns

Test Condition

400V, 10A, 26Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

14A

Current - Collector Pulsed (Icm)

42A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 7.8A

Power - Max

49W

Switching Energy

240µJ (on), 260µJ (off)

Input Type

Standard

Gate Charge

23nC

Td (on/off) @ 25°C

17ns/160ns

Test Condition

480V, 7.8A, 75Ohm, 15V

Reverse Recovery Time (trr)

28ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

76A

Current - Collector Pulsed (Icm)

152A

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 39A

Power - Max

200W

Switching Energy

4mJ (off)

Input Type

Standard

Gate Charge

110nC

Td (on/off) @ 25°C

25ns/250ns

Test Condition

480V, 39A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

APT95GR65B2

Microsemi

Manufacturer

Microsemi Corporation

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

208A

Current - Collector Pulsed (Icm)

400A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 95A

Power - Max

892W

Switching Energy

3.12mJ (on), 2.55mJ (off)

Input Type

Standard

Gate Charge

420nC

Td (on/off) @ 25°C

29ns/226ns

Test Condition

433V, 95A, 4.3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

T-MAX™ [B2]

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

510A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

2300W

Switching Energy

3.35mJ (on), 1.9mJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

50ns/160ns

Test Condition

400V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264 (IXXK)

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