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IKA15N65ET6XKSA1

IKA15N65ET6XKSA1

For Reference Only

Part Number IKA15N65ET6XKSA1
PNEDA Part # IKA15N65ET6XKSA1
Description IGBT 650V 15A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,228
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IKA15N65ET6XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIKA15N65ET6XKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IKA15N65ET6XKSA1 Specifications

ManufacturerInfineon Technologies
Series*
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

105A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

Power - Max

230W

Switching Energy

430µJ (on), 350µJ (off)

Input Type

Standard

Gate Charge

30nC

Td (on/off) @ 25°C

19ns/80ns

Test Condition

400V, 20A, 20Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

15A

Current - Collector Pulsed (Icm)

30A

Vce(on) (Max) @ Vge, Ic

2.75V @ 15V, 3A

Power - Max

62W

Switching Energy

55µJ (on), 85µJ (off)

Input Type

Standard

Gate Charge

19nC

Td (on/off) @ 25°C

17ns/72ns

Test Condition

390V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK

FGH40N60SMDF

ON Semiconductor

Manufacturer

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Series

-

IGBT Type

Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 40A

Power - Max

349W

Switching Energy

1.3mJ (on), 260µJ (off)

Input Type

Standard

Gate Charge

119nC

Td (on/off) @ 25°C

12ns/92ns

Test Condition

400V, 40A, 6Ohm, 15V

Reverse Recovery Time (trr)

90ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

AIGW50N65F5XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, Trenchstop™ 5

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Power - Max

270W

Switching Energy

490µJ (on), 140µJ (off)

Input Type

Standard

Gate Charge

1018nC

Td (on/off) @ 25°C

21ns/156ns

Test Condition

400V, 25A, 12Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PG-TO247-3-41

IRGB6B60KPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

13A

Current - Collector Pulsed (Icm)

26A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 5A

Power - Max

90W

Switching Energy

110µJ (on), 135µJ (off)

Input Type

Standard

Gate Charge

18.2nC

Td (on/off) @ 25°C

25ns/215ns

Test Condition

400V, 5A, 100Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

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