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IKW50N60H3FKSA1

IKW50N60H3FKSA1

For Reference Only

Part Number IKW50N60H3FKSA1
PNEDA Part # IKW50N60H3FKSA1
Description IGBT 600V 100A 333W TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 9,456
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IKW50N60H3FKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIKW50N60H3FKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IKW50N60H3FKSA1 Specifications

ManufacturerInfineon Technologies
SeriesTrenchStop®
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)100A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 50A
Power - Max333W
Switching Energy2.36mJ
Input TypeStandard
Gate Charge315nC
Td (on/off) @ 25°C23ns/235ns
Test Condition400V, 50A, 7Ohm, 15V
Reverse Recovery Time (trr)130ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

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IKFW50N60DH3EXKSA1

Infineon Technologies

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Series

TrenchStop™

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 40A

Power - Max

130W

Switching Energy

1.28mJ (on), 560µJ (off)

Input Type

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Gate Charge

160nC

Td (on/off) @ 25°C

21ns/174ns

Test Condition

400V, 40A, 8Ohm, 15V

Reverse Recovery Time (trr)

64ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PG-TO247-3-AI

AUIRGP4066D1-E

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

140A

Current - Collector Pulsed (Icm)

225A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 75A

Power - Max

454W

Switching Energy

4.24mJ (on), 2.17mJ (off)

Input Type

Standard

Gate Charge

225nC

Td (on/off) @ 25°C

50ns/200ns

Test Condition

400V, 75A, 10Ohm, 15V

Reverse Recovery Time (trr)

240ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD

STGW45NC60WD

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

90A

Current - Collector Pulsed (Icm)

230A

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 30A

Power - Max

285W

Switching Energy

302µJ (on), 349µJ (off)

Input Type

Standard

Gate Charge

126nC

Td (on/off) @ 25°C

33ns/168ns

Test Condition

390V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

45ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

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ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

400V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

8V @ 4.5V, 150A

Power - Max

45W

Switching Energy

-

Input Type

Standard

Gate Charge

-

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Supplier Device Package

I-PAK

APT15GP60KG

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 7®

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

56A

Current - Collector Pulsed (Icm)

65A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 15A

Power - Max

250W

Switching Energy

130µJ (on), 121µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 15A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-220-3

Supplier Device Package

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