IPA50R800CEXKSA2
For Reference Only
| Part Number | IPA50R800CEXKSA2 |
| PNEDA Part # | IPA50R800CEXKSA2 |
| Description | MOSFET N-CH 500V 4.1A TO-220FP |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,850 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 2 - May 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPA50R800CEXKSA2 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPA50R800CEXKSA2 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IPA50R800CEXKSA2 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ CE |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 1.5A, 13V |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Gate Charge (Qg) (Max) @ Vgs | 12.4nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 26.4W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 Full Pack |
| Package / Case | TO-220-3 Full Pack |
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 23A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 120mOhm @ 11.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 1620pF @ 25V FET Feature - Power Dissipation (Max) 3W (Ta), 90W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.7mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 52µA Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3250pF @ 25V FET Feature - Power Dissipation (Max) 100W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
