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IPB009N03LGATMA1

IPB009N03LGATMA1

For Reference Only

Part Number IPB009N03LGATMA1
PNEDA Part # IPB009N03LGATMA1
Description MOSFET N-CH 30V 180A TO263-7
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 20,184
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB009N03LGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB009N03LGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPB009N03LGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs0.95mOhm @ 100A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs227nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds25000pF @ 15V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7-3
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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