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IPB049N06L3GATMA1

IPB049N06L3GATMA1

For Reference Only

Part Number IPB049N06L3GATMA1
PNEDA Part # IPB049N06L3GATMA1
Description MOSFET N-CH 60V 80A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,020
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB049N06L3GATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB049N06L3GATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB049N06L3GATMA1, IPB049N06L3GATMA1 Datasheet (Total Pages: 10, Size: 682.42 KB)
PDFIPB049N06L3GATMA1 Datasheet Cover
IPB049N06L3GATMA1 Datasheet Page 2 IPB049N06L3GATMA1 Datasheet Page 3 IPB049N06L3GATMA1 Datasheet Page 4 IPB049N06L3GATMA1 Datasheet Page 5 IPB049N06L3GATMA1 Datasheet Page 6 IPB049N06L3GATMA1 Datasheet Page 7 IPB049N06L3GATMA1 Datasheet Page 8 IPB049N06L3GATMA1 Datasheet Page 9 IPB049N06L3GATMA1 Datasheet Page 10

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IPB049N06L3GATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2.2V @ 58µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8400pF @ 30V
FET Feature-
Power Dissipation (Max)115W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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