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IPB070N06L G

IPB070N06L G

For Reference Only

Part Number IPB070N06L G
PNEDA Part # IPB070N06L-G
Description MOSFET N-CH 60V 80A TO-263
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,094
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 11 - May 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB070N06L G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB070N06L G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB070N06L G, IPB070N06L G Datasheet (Total Pages: 10, Size: 736.86 KB)
PDFIPB070N06L G Datasheet Cover
IPB070N06L G Datasheet Page 2 IPB070N06L G Datasheet Page 3 IPB070N06L G Datasheet Page 4 IPB070N06L G Datasheet Page 5 IPB070N06L G Datasheet Page 6 IPB070N06L G Datasheet Page 7 IPB070N06L G Datasheet Page 8 IPB070N06L G Datasheet Page 9 IPB070N06L G Datasheet Page 10

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IPB070N06L G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs126nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4300pF @ 30V
FET Feature-
Power Dissipation (Max)214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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