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IPB136N08N3 G

IPB136N08N3 G

For Reference Only

Part Number IPB136N08N3 G
PNEDA Part # IPB136N08N3-G
Description MOSFET N-CH 80V 45A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,948
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB136N08N3 G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB136N08N3 G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB136N08N3 G, IPB136N08N3 G Datasheet (Total Pages: 11, Size: 1,019.89 KB)
PDFIPB136N08N3 G Datasheet Cover
IPB136N08N3 G Datasheet Page 2 IPB136N08N3 G Datasheet Page 3 IPB136N08N3 G Datasheet Page 4 IPB136N08N3 G Datasheet Page 5 IPB136N08N3 G Datasheet Page 6 IPB136N08N3 G Datasheet Page 7 IPB136N08N3 G Datasheet Page 8 IPB136N08N3 G Datasheet Page 9 IPB136N08N3 G Datasheet Page 10 IPB136N08N3 G Datasheet Page 11

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IPB136N08N3 G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs13.6mOhm @ 45A, 10V
Vgs(th) (Max) @ Id3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1730pF @ 40V
FET Feature-
Power Dissipation (Max)79W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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