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IPB45N06S3-16

IPB45N06S3-16

For Reference Only

Part Number IPB45N06S3-16
PNEDA Part # IPB45N06S3-16
Description MOSFET N-CH 55V 45A TO-263
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,276
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB45N06S3-16 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB45N06S3-16
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB45N06S3-16, IPB45N06S3-16 Datasheet (Total Pages: 9, Size: 188.17 KB)
PDFIPB45N06S3-16 Datasheet Cover
IPB45N06S3-16 Datasheet Page 2 IPB45N06S3-16 Datasheet Page 3 IPB45N06S3-16 Datasheet Page 4 IPB45N06S3-16 Datasheet Page 5 IPB45N06S3-16 Datasheet Page 6 IPB45N06S3-16 Datasheet Page 7 IPB45N06S3-16 Datasheet Page 8 IPB45N06S3-16 Datasheet Page 9

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IPB45N06S3-16 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs15.4mOhm @ 23A, 10V
Vgs(th) (Max) @ Id4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs57nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2980pF @ 25V
FET Feature-
Power Dissipation (Max)65W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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