IPB77N06S3-09
For Reference Only
| Part Number | IPB77N06S3-09 |
| PNEDA Part # | IPB77N06S3-09 |
| Description | MOSFET N-CH 55V 77A D2PAK |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,772 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 8 - May 13 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPB77N06S3-09 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPB77N06S3-09 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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Logistics Mode
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IPB77N06S3-09 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 77A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 39A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 55µA |
| Gate Charge (Qg) (Max) @ Vgs | 103nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5335pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer IXYS Series PolarHT™ HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 22mOhm @ 45A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7500pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS247™ Package / Case ISOPLUS247™ |
