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STH180N10F3-2

STH180N10F3-2

For Reference Only

Part Number STH180N10F3-2
PNEDA Part # STH180N10F3-2
Description MOSFET N-CH 100V 120A H2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 14,418
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STH180N10F3-2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTH180N10F3-2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STH180N10F3-2, STH180N10F3-2 Datasheet (Total Pages: 16, Size: 645.8 KB)
PDFSTH180N10F3-2 Datasheet Cover
STH180N10F3-2 Datasheet Page 2 STH180N10F3-2 Datasheet Page 3 STH180N10F3-2 Datasheet Page 4 STH180N10F3-2 Datasheet Page 5 STH180N10F3-2 Datasheet Page 6 STH180N10F3-2 Datasheet Page 7 STH180N10F3-2 Datasheet Page 8 STH180N10F3-2 Datasheet Page 9 STH180N10F3-2 Datasheet Page 10 STH180N10F3-2 Datasheet Page 11

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STH180N10F3-2 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™ III
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs114.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6665pF @ 25V
FET Feature-
Power Dissipation (Max)315W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2Pak-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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