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MTP12P10G

MTP12P10G

For Reference Only

Part Number MTP12P10G
PNEDA Part # MTP12P10G
Description MOSFET P-CH 100V 12A TO220AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,654
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MTP12P10G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberMTP12P10G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
MTP12P10G, MTP12P10G Datasheet (Total Pages: 6, Size: 72.82 KB)
PDFMTP12P10G Datasheet Cover
MTP12P10G Datasheet Page 2 MTP12P10G Datasheet Page 3 MTP12P10G Datasheet Page 4 MTP12P10G Datasheet Page 5 MTP12P10G Datasheet Page 6

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MTP12P10G Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs300mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds920pF @ 25V
FET Feature-
Power Dissipation (Max)75W (Tc)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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