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IPD053N06N3GBTMA1

IPD053N06N3GBTMA1

For Reference Only

Part Number IPD053N06N3GBTMA1
PNEDA Part # IPD053N06N3GBTMA1
Description MOSFET N-CH 60V 90A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,472
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD053N06N3GBTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD053N06N3GBTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD053N06N3GBTMA1, IPD053N06N3GBTMA1 Datasheet (Total Pages: 9, Size: 615.86 KB)
PDFIPD053N06N3GBTMA1 Datasheet Cover
IPD053N06N3GBTMA1 Datasheet Page 2 IPD053N06N3GBTMA1 Datasheet Page 3 IPD053N06N3GBTMA1 Datasheet Page 4 IPD053N06N3GBTMA1 Datasheet Page 5 IPD053N06N3GBTMA1 Datasheet Page 6 IPD053N06N3GBTMA1 Datasheet Page 7 IPD053N06N3GBTMA1 Datasheet Page 8 IPD053N06N3GBTMA1 Datasheet Page 9

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IPD053N06N3GBTMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.3mOhm @ 90A, 10V
Vgs(th) (Max) @ Id4V @ 58µA
Gate Charge (Qg) (Max) @ Vgs82nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6600pF @ 30V
FET Feature-
Power Dissipation (Max)115W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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