Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTA52P10P

IXTA52P10P

For Reference Only

Part Number IXTA52P10P
PNEDA Part # IXTA52P10P
Description MOSFET P-CH 100V 52A TO-263
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,308
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTA52P10P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTA52P10P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTA52P10P, IXTA52P10P Datasheet (Total Pages: 6, Size: 182.03 KB)
PDFIXTH52P10P Datasheet Cover
IXTH52P10P Datasheet Page 2 IXTH52P10P Datasheet Page 3 IXTH52P10P Datasheet Page 4 IXTH52P10P Datasheet Page 5 IXTH52P10P Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTA52P10P Datasheet
  • where to find IXTA52P10P
  • IXYS

  • IXYS IXTA52P10P
  • IXTA52P10P PDF Datasheet
  • IXTA52P10P Stock

  • IXTA52P10P Pinout
  • Datasheet IXTA52P10P
  • IXTA52P10P Supplier

  • IXYS Distributor
  • IXTA52P10P Price
  • IXTA52P10P Distributor

IXTA52P10P Specifications

ManufacturerIXYS
SeriesPolarP™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs50mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2845pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXTA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

IRF9Z34NSTRR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

620pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 68W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDMS2734

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

2.8A (Ta), 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

122mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2365pF @ 100V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 78W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-MLP (5x6), Power56

Package / Case

8-PowerWDFN

STL8N10F7

STMicroelectronics

Manufacturer

STMicroelectronics

Series

DeepGATE™, STripFET™ VII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.5W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (3.3x3.3)

Package / Case

8-PowerVDFN

AOI4T60

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.1Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

460pF @ 100V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251A

Package / Case

TO-251-3 Stub Leads, IPak

SPB18P06P

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

18.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 13.2A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

860pF @ 25V

FET Feature

-

Power Dissipation (Max)

81.1W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

CDSU4148

CDSU4148

Comchip Technology

DIODE GEN PURP 75V 150MA 0603

ESDALC5-1BM2

ESDALC5-1BM2

STMicroelectronics

TVS DIODE 5V SOD882

25AA512T-I/SM

25AA512T-I/SM

Microchip Technology

IC EEPROM 512K SPI 20MHZ 8SOIJ

MAX3087EESA+

MAX3087EESA+

Maxim Integrated

IC TRANSCEIVER FULL 1/1 8SOIC

ADM2483BRWZ

ADM2483BRWZ

Analog Devices

DGTL ISO RS422/RS485 16SOIC

74HC160N,652

74HC160N,652

NXP

IC SYNC BCD DECADE COUNT 16DIP

KSZ9031RNXIC-TR

KSZ9031RNXIC-TR

Microchip Technology

IC TRANSCEIVER FULL 4/4 48QFN

TCMT4100

TCMT4100

Vishay Semiconductor Opto Division

OPTOISO 3.75KV 4CH TRANS 16-SOP

J111

J111

ON Semiconductor

JFET N-CH 35V 625MW TO92

IR2110STRPBF

IR2110STRPBF

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 16SOIC

LTM8046MPY#PBF

LTM8046MPY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 1.8-12V

ISL6262CRZ

ISL6262CRZ

Renesas Electronics America Inc.

IC REG CONV INTEL 1OUT 48QFN