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IPD09N03LB G

IPD09N03LB G

For Reference Only

Part Number IPD09N03LB G
PNEDA Part # IPD09N03LB-G
Description MOSFET N-CH 30V 50A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,392
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 20 - Jul 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD09N03LB G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD09N03LB G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD09N03LB G, IPD09N03LB G Datasheet (Total Pages: 12, Size: 629.35 KB)
PDFIPU09N03LB G Datasheet Cover
IPU09N03LB G Datasheet Page 2 IPU09N03LB G Datasheet Page 3 IPU09N03LB G Datasheet Page 4 IPU09N03LB G Datasheet Page 5 IPU09N03LB G Datasheet Page 6 IPU09N03LB G Datasheet Page 7 IPU09N03LB G Datasheet Page 8 IPU09N03LB G Datasheet Page 9 IPU09N03LB G Datasheet Page 10 IPU09N03LB G Datasheet Page 11

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IPD09N03LB G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 15V
FET Feature-
Power Dissipation (Max)58W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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