Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPD135N03LGXT

IPD135N03LGXT

For Reference Only

Part Number IPD135N03LGXT
PNEDA Part # IPD135N03LGXT
Description MOSFET N-CH 30V 30A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,526
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD135N03LGXT Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD135N03LGXT
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD135N03LGXT, IPD135N03LGXT Datasheet (Total Pages: 12, Size: 1,378.17 KB)
PDFIPD135N03LGXT Datasheet Cover
IPD135N03LGXT Datasheet Page 2 IPD135N03LGXT Datasheet Page 3 IPD135N03LGXT Datasheet Page 4 IPD135N03LGXT Datasheet Page 5 IPD135N03LGXT Datasheet Page 6 IPD135N03LGXT Datasheet Page 7 IPD135N03LGXT Datasheet Page 8 IPD135N03LGXT Datasheet Page 9 IPD135N03LGXT Datasheet Page 10 IPD135N03LGXT Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPD135N03LGXT Datasheet
  • where to find IPD135N03LGXT
  • Infineon Technologies

  • Infineon Technologies IPD135N03LGXT
  • IPD135N03LGXT PDF Datasheet
  • IPD135N03LGXT Stock

  • IPD135N03LGXT Pinout
  • Datasheet IPD135N03LGXT
  • IPD135N03LGXT Supplier

  • Infineon Technologies Distributor
  • IPD135N03LGXT Price
  • IPD135N03LGXT Distributor

IPD135N03LGXT Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs13.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 15V
FET Feature-
Power Dissipation (Max)31W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IRF7707TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

22mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

47nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

2361pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-TSSOP

Package / Case

8-TSSOP (0.173", 4.40mm Width)

IRLU8256PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

81A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1470pF @ 13V

FET Feature

-

Power Dissipation (Max)

63W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

SI7423DN-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

7.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

18mOhm @ 11.7A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

SI5475BDC-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

28mOhm @ 5.6A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 6V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 6.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

1206-8 ChipFET™

Package / Case

8-SMD, Flat Lead

2N6661-2

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

90V

Current - Continuous Drain (Id) @ 25°C

860mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

4Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

FET Feature

-

Power Dissipation (Max)

725mW (Ta), 6.25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-39

Package / Case

TO-205AD, TO-39-3 Metal Can

Recently Sold

MMSD4148T1G

MMSD4148T1G

ON Semiconductor

DIODE GEN PURP 100V 200MA SOD123

SSM2166SZ

SSM2166SZ

Analog Devices

IC PREAMP AUDIO MONO MIC 14SOIC

LTM4623IY#PBF

LTM4623IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5.5V 3A

06035C104KAT2A

06035C104KAT2A

CAP CER 0.1UF 50V X7R 0603

NTGS5120PT1G

NTGS5120PT1G

ON Semiconductor

MOSFET P-CH 60V 1.8A 6-TSOP

MAX4162ESA+

MAX4162ESA+

Maxim Integrated

IC OPAMP GP 1 CIRCUIT 8SOIC

MAX232EJE

MAX232EJE

Maxim Integrated

MULTICHANNEL RS-232 DRIVERS/RECE

7447789002

7447789002

Wurth Electronics

FIXED IND 2.2UH 4.02A 23 MOHM

AD8044ARZ-14

AD8044ARZ-14

Analog Devices

IC OPAMP VFB 4 CIRCUIT 14SOIC

A42MX16-PQ160

A42MX16-PQ160

Microsemi

IC FPGA 125 I/O 160QFP

S2G-13-F

S2G-13-F

Diodes Incorporated

DIODE GEN PURP 400V 1.5A SMB

74LCX16373MTDX

74LCX16373MTDX

ON Semiconductor

IC LATCH TRANSP 16BIT LV 48TSSOP