IPD30N06S215ATMA2
For Reference Only
| Part Number | IPD30N06S215ATMA2 |
| PNEDA Part # | IPD30N06S215ATMA2 |
| Description | MOSFET N-CH 55V 30A TO252-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 45,984 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 15 - Jun 20 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPD30N06S215ATMA2 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPD30N06S215ATMA2 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPD30N06S215ATMA2 Datasheet
- where to find IPD30N06S215ATMA2
- Infineon Technologies
- Infineon Technologies IPD30N06S215ATMA2
- IPD30N06S215ATMA2 PDF Datasheet
- IPD30N06S215ATMA2 Stock
- IPD30N06S215ATMA2 Pinout
- Datasheet IPD30N06S215ATMA2
- IPD30N06S215ATMA2 Supplier
- Infineon Technologies Distributor
- IPD30N06S215ATMA2 Price
- IPD30N06S215ATMA2 Distributor
IPD30N06S215ATMA2 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 14.7mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 80µA |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1485pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-11 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 500mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1585pF @ 25V FET Feature - Power Dissipation (Max) 123W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
Manufacturer IXYS Series HiPerFET™, Polar3™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 300mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V FET Feature - Power Dissipation (Max) 380W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXFA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 3.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 60mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 646pF @ 30V FET Feature - Power Dissipation (Max) 478mW (Ta), 8.36W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 1.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 97nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 8130pF @ 10V FET Feature - Power Dissipation (Max) 6.25W (Ta), 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
Manufacturer ON Semiconductor Series UniFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 105mOhm @ 24A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 137nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6460pF @ 25V FET Feature - Power Dissipation (Max) 625W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
