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IPD50N12S3L15ATMA1

IPD50N12S3L15ATMA1

For Reference Only

Part Number IPD50N12S3L15ATMA1
PNEDA Part # IPD50N12S3L15ATMA1
Description MOSFET N-CHANNEL_100+
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,426
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD50N12S3L15ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD50N12S3L15ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPD50N12S3L15ATMA1 Specifications

ManufacturerInfineon Technologies
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

20mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

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FET Feature

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Power Dissipation (Max)

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Manufacturer

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Series

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FET Type

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Technology

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Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

165mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

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FET Feature

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Power Dissipation (Max)

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Operating Temperature

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Manufacturer

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FET Type

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Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14mOhm @ 54A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

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FET Feature

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Power Dissipation (Max)

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Operating Temperature

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Alpha & Omega Semiconductor

Manufacturer

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Series

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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FET Feature

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Power Dissipation (Max)

28W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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Package / Case

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